86-13826519287‬
  • image of Bipolar Transistor Arrays>JANSL2N3810U
  • image of Bipolar Transistor Arrays>JANSL2N3810U
JANSL2N3810U
DUAL RH SMALL-SIGNAL BJT
JANSL2N3810U
Bipolar Transistor Arrays
Roving Networks (Microchip Technology)
DUAL RH SMALL-S
-
Bulk
0
: $262.3100
: 0

50

$262.3100

$13,115.5000

image of Bipolar Transistor Arrays>JANSL2N3810U
image of Bipolar Transistor Arrays>JANSL2N3810U
JANSL2N3810U
-
Roving Networks (Microchip Technology)
DUAL RH SMALL-S
-
Bulk
0
NO
JANSL2N3810U
微芯-Microchip
Rad-Hard Transistors
JANSL2N3810U
微芯-Microchip
Rad-Hard Transistors
JANSL2N3810U
微芯-Microchip
Rad-Hard Transistors
JANSL2N3810U
微芯-Microchip
415089
JANSL2N3810U
微芯-Microchip
415090
JANSL2N3810U
微芯-Microchip
415092
Product parameters
TYPEDESCRIPTION
MfrRoving Networks (Microchip Technology)
Series-
PackageBulk
Product StatusACTIVE
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
Supplier Device PackageU
GradeMilitary
QualificationMIL-PRF-19500/336
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