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MNS2N3810U/TR
DUAL SMALL-SIGNAL BJT
MNS2N3810U/TR
Bipolar Transistor Arrays
Roving Networks (Microchip Technology)
DUAL SMALL-SIGN
-
Bulk
0
: $43.2800
: 0

100

$43.2800

$4,328.0000

image of Bipolar Transistor Arrays>MNS2N3810U/TR
MNS2N3810U/TR
-
Roving Networks (Microchip Technology)
DUAL SMALL-SIGN
-
Bulk
0
NO
Product parameters
TYPEDESCRIPTION
MfrRoving Networks (Microchip Technology)
Series-
PackageBulk
Product StatusACTIVE
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500/336
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